Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
plasma ashing  removal of organic materials (e.g. photresist) by oxidation using plasma generated oxidizing species.
resist ashing  process of resist removal in strongly oxidizing gaseous atmosphere.
resist stripping  resist removal; process in which resist is removed from the surface when its is not needed any longer, i.e. after completion of etching operation, or ion implantation; can be greatly hampered by changes in the chemical composition of the resist occurring during processing, e.g. during ion implantation; carried out using either wet or dry (ashing) strongly oxidizing chemistries; can be greatly hampered by changes in chemical composition of the resist occuring during processing, e.g. during ion implantation.
stripping  process of material removal from the wafer surface; typically implies that removal is not carried out for the pattering purpose, e.g. resist stripping in which case entire resist is removed following lithography and etching.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.