Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
planar CMOS  standard CMOS cell featuring horizontal channels induced in the near-surface region of the substrate; as opposed to non-planar CMOS cells with channels built on the surface of the substrate such as in, for instance, FinFETs.
FinFET  innovative design of an MOSFET; typically built on SOI substrate on which silicon is etched into "fin"-like shaped body of the transistor; the gate is wrapped around and over the "fin" which also acts as a transistor's channel.

Reference: SemiOneSource,Notes, SN-4
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.