Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
planar CMOS  standard CMOS cell featuring horizontal channels induced in the near-surface region of the substrate; as opposed to non-planar CMOS cells with channels built on the surface of the substrate such as in, for instance, FinFETs.
FinFET  innovative design of an MOSFET; typically built on SOI substrate on which silicon is etched into "fin"-like shaped body of the transistor; the gate is wrapped around and over the "fin" which also acts as a transistor's channel.

Reference: SemiOneSource,Notes, SN-4
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.