Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
photocurrent  current in semiconductor resulting from its illumination with light featuring energy higher than semiconductor's energy gap.
energy gap, forbidden band, bandgap, Eg  energy band separating conduction and valence bands in the solid; no electron energy levels are allowed in the forbidden band; no energy gap in metals in which case conduction and valence bands overlap; solids featuring energy gap are defined as either semiconductors or insulators based on the width of energy gap; values of Eg (at 300K) for common semiconductors: InSb - 0.17 eV, Ge - 0.67 eV, Si - 1.12 eV, GaAs - 1.43 eV GaP - 2.26 eV, 6H-SiC - 2.9 eV, GaN - 3.5 eV, and insulators Ta2O5 - 4.2 eV , TiO2 -5 eV, Si3N4 - 5.1, Al2O3 ~5 eV, SiO2 - 8.0
Term (Index) Definition
photocurrent  current in semiconductor resulting from its illumination with light featuring energy higher than semiconductor's bandgap.
energy gap, forbidden band, bandgap, Eg  energy band separating conduction and valence bands in the solid; no electron energy levels are allowed in the forbidden band; no energy gap in metals in which case conduction and valence bands overlap; solids featuring energy gap are defined as either semiconductors or insulators based on the width of energy gap; values of Eg (at 300K) for common semiconductors: InSb - 0.17 eV, Ge - 0.67 eV, Si - 1.12 eV, GaAs - 1.43 eV GaP - 2.26 eV, 6H-SiC - 2.9 eV, GaN - 3.5 eV, and insulators Ta2O5 - 4.2 eV , TiO2 -5 eV, Si3N4 - 5.1, Al2O3 ~5 eV, SiO2 - 8.0
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.