Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
phosphorus tetrachloride, POCl3  liquid compound commonly used in silicon manufacturing as a source of phosphorus (P, n-type dopant in Si); liquid is vaporized and transferred to the furnace diffusion tube.
diffusion  in general, motion of species in solids in the direction of concentration gradient; (i)diffusion of free charge carriers in semiconductor; (ii) diffusion of dopant atoms in semiconductor at elevated temperature; (iii) diffusion - common name of the high temperature process during which dopant atoms are introduced into semiconductor by diffusion.
dopant  element introduced into semiconductor to establish either p- type (acceptors) or n- type (donors) conductivity; common dopants in silicon: p-type, boron, B; n-type phosphorous, P, arsenic, As ,antimony, Sb.
phosphorus, P  element from the 5th group of periodic table; common n-type dopant (donor) in silicon; about 10 times faster than As and Sb (other n-type dopants of Si) diffusant in Si.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.