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Term (Index) Definition
particle removal  process designed to remove particles from the wafer surface; carried out using wet cleaning (APM) with megasonic agitation; particle removal in the gas phase is less effective.
APM  Ammonia hydroxide-hydrogen Peroxide-water Mixture; typically 0.25:1:5; same as SC1 and RCA-1; cleaning solution used primarily to remove particles from the surface; also capable of removing surface organics; strong solutions can etch/roughen silicon surface; forms chemical oxide (hydrophylic surface)on Si surface; applied at temperature between 40 oC and 70 oC; typically combined with megasonic agitation.
megasonic cleaning  wafer cleaning process which uses sonic waves generated in cleaning solution to increase efficiency of particle removal process.

Reference: Akrion, Inc.
PRE  particle removal efficiency; expressed in %; often related to a particle size range; needs to be close to 100% for the particle removal method to be considered effective.
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