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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
oxide trapped charge  charge centers in SiO2 and other gate dielectrics which are electrically activated/de-activated by trapping/de-trapping charge carriers injected into the oxide either from the gate or from the substrate; causes instabilities of MOSFETs characteristics.
gate injection  during constant-current stress of MOS gate stacks electrons are injected into the oxide from the gate contact.
substrate injection  during constant-current stress of MOS gate stacks electrons are injected into the oxide from the Si substrate.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.