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Term (Index) Definition
oxide breakdown  irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.

Reference: See Semiconductor Note #20 for more information
progressive breakdown  gradual degradation, and eventual breakdown, of the very thin gate oxide in MOS devices under the prolonged electric field stress.
hard breakdown  catastrophic, irreversible breakdown of the MOS gate oxide.
soft breakdown  excessive leakage current in the MOS gate oxide, but no irreversible breakdown of the oxide.
Term (Index) Definition
ramp voltage oxide breakdown, Ebd  measure of reliability of oxides in MOS gates; gate voltage is gradually increased until oxide breaks down (uncontrolled current flows across the oxide)and oxide breakdown voltage is determined; a TZDB method; oxide breakdown field is a ratio of breakdown voltage over oxide thickness typically expressed in MV/cm.
oxide breakdown  irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.

Reference: See Semiconductor Note #20 for more information
charge-to-breakdown, Qbd  measure of reliability of oxides in MOS gates; certain current is forced through the oxide at the constant gate voltage; point in time at which voltage drops (indicating oxide failure) is determined; knowing current and time to breakdown total charge needed to break the oxide is determined; a TDDB method.
Time-Dependent Dielectric Breakdown, TDDB  technique to evaluate reliability of gate oxides in MOS devices; breakdown of the oxide resulting from the prolonged stress; either time needed to break voltage stressed oxide is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS - Constant Current Stress).

Reference: Click here for additional information
Time-Zero Dielectric Breakdown, TZDB  technique to evaluate reliability of gate oxides in MOS devices; oxide breakdown occuring without prolonged stress, i.e. under the condition of stress rapidly increasing from zero to oxide breakdown.

Reference: Click here for additional information
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