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Term (Index) Definition
oxidation mask  thin layer of material capable of preventing oxidation of material underneath it; in silicon processing a silicon nitride, Si3N4, is acting as a very effective oxidation mask (see LOCOS)
LOCOS  Local Oxidation of Silicon; isolation scheme commonly used in MOS/CMOS silicon technology; thick (in the range of 500 nm) pad of thermally grown SiO2 separates adjacent devices (e.g. PMOS and NMOS transistor in CMOS structure); local oxidation is accomplished by using silicon nitride, Si3N4, to prevent oxidation of Si in selected areas, hence, "local" oxidation; prior to SiO2 pad formation silicon in between Si3N4 covered regions is implanted to form "channel stop"; Si3N4 mask is etched off following thermal oxidation and MOSFETs are ten formed in the open spaces.
silicon nitride, Si3N4  dielectric material with energy gap = 5 eV and density ~3.0 g/cm3; excellent mask (barrier) against oxidation of Si; commonlly used in silicon integrated circuit manufacturing primarily in LOCOS process; not used as a gate dielectric due to inferior interface with silicon and bulk defects; properties depend on deposition method: dielectric strength ~107 V/cm, dielectric constant k ~6-7, bulk resistivity 1015-1017 ohm-cm; deposited by CDV.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.