Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
oxidation constants  coefficients used in calculations of oxide thickness in thermal oxidation of silicon; Deal-Grove model; defined for a given temperature of oxidation, oxidizing ambient, and surface orientation; take into account mass transfer in the gas-phase, diffusivity of oxidant in the oxide and the rate of surface reaction.
Deal - Grove model  a model describing kinetics of thermal oxidation of silicon based on chemical reaction between silicon and oxidizing species; most accurate for oxides thicker than about 30 nm; of limited use for oxide thinner than about 10 nm; assumes surface reaction controlled oxide growth in early stage of oxidation (linear regime) and controlled by diffusion of oxidizing species through the oxide during extended oxidation (parabolic regime); one among the best established models in silicon processing.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.