Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
organic contaminant  in semiconductor processing mainly hydrocarbons from resist/etching processes, ambient air, storage environment, shipping boxes, etc.; if not controlled may cause reliability problems in MOS devices as well as have an adverse effect on the characteristics of metal-semiconductor contacts and epitaxial layers; removal accomplished using strongly oxidizing ambient both wet and dry.
oxide breakdown  irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.

Reference: See Semiconductor Note #20 for more information
ICP MS  Inductively Coupled Plasma Mass Spectroscopy; a method allowing identification of species adsorbed on the surface of the wafer; commonly used to detect organic surface contaminants which are thermally desorbed and then identified by analyzing plasma emission spectrum.
metallic contaminant  atoms of metals deposited on the Si surface during device processing as a reult of process malfunction; common metallic contaminants: Fe, Al, Cu, Ca, Na; originate from process chemicals, ambient, and tools; major reliability problem; should not be allowed on Si surface in concentrations above 109 cm-2; designated cleans are applied to remove metallic contaminants from the surface.
wetting angle  see contact angle
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.