Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
megasonic cleaning  wafer cleaning process which uses sonic waves generated in cleaning solution to increase efficiency of particle removal process.

Reference: Akrion, Inc.
APM  Ammonia hydroxide-hydrogen Peroxide-water Mixture; typically 0.25:1:5; same as SC1 and RCA-1; cleaning solution used primarily to remove particles from the surface; also capable of removing surface organics; strong solutions can etch/roughen silicon surface; forms chemical oxide (hydrophylic surface)on Si surface; applied at temperature between 40 oC and 70 oC; typically combined with megasonic agitation.
megasonic agitation, megasonic scrubbing  used to enhance particle removal from wafer surface by sonic pressure; megasonic energy at the frequency in 500-1000 kHz range is applied to the liquid (typically APM cleaning solution) in which wafers are immersed; more effective and less potentially damaging to the wafer (reduced cavitation) than ultrasonic agitation; standard feature in the immersion cleaning tools.

Reference: Akrion, Inc.
wet bench  typically fully automatic process tool used to carry out wet cleaning and etching operations in semiconductor processing; commonly includes several tanks each containing either cleaning/etching solution or deionized rinsing water in which wafers are immersed in predetermined sequence; typically includes also drying module.

Reference: Akrion, Inc. SemiOneSource,Notes
particle removal  process designed to remove particles from the wafer surface; carried out using wet cleaning (APM) with megasonic agitation; particle removal in the gas phase is less effective.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.