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Term (Index) Definition
masked lithography  lithographic process in which resist is exposed through the mask which by allowing exposure in certain areas and blocking off exposure in other areas creates desired patter in the layer of resist.
photolithography, optical lithography  pattern definition method which uses UV radiation to expose the resist; the most common lithography technique in semiconductor manufacturing; using extremely short wavelength UV (extreme UV; wavelenghts below 200 nm), projection printing (steppers), phase shift masks, and adequate resist technology photolithography is capable of resolution below 100 nm.
photomask  mask used in photolithography to block resist exposure to UV radiation in selected areas; consists of chrome opaque areas supported by high quality quartz plate transparent to UV radiation.
X-ray lithography  lithography method using X-ray to expose the resist; due to shorter wavelength of X-ray radiation (0.4 - 4 nm)XRL allows higher resolution than photolithography which uses longer wavelength UV irradiation; XRL requires special mask and resists sensitive to X-rays.
X-ray mask  mask used in X-ray lithography; uses gold as an opaque material; gold pattern (defined using e-beam lithography) is supported by a thin membrane made out of material transparent to X-rays of given wavelength, e.g. Si3N4, SiC and others.
maskless lithography,  lithographic process in which pattern in the resist is exposed by direct writing with computer driven electron beam rather than by exposure through the mask.
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