Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
lightly doped drain, LDD  reduced doping of the drain region in veru small geometry MOS/CMOS transistor; part of the drain engineering strategy in advanced CMOS; designed to control drain-substarte breakdown; the reduced doping gradient between drain and channel lowers electric field in the channel in the vicinity of the drain; implementation: moderate implant before spacer formation, heavy implant after spacer formation.
drain  heavily doped region in semiconductor substrates located at the end of the channel in Field Effect Transistors; carriers are flowing out of the transistor through the drain.
drain engineering  modifications of the drain and channel region adjacent to the drain in integrated MOS and CMOS devices; goal is to improve characteristics of MOS transistors with ultra-short channel.
drain extension  low doping extension of source and drain toward channel; carried out by ion implantation; used in advanced CMOS to prevent premature breakdown of drain-substrate junction.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.