Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
leakage current  uncontrolled ("parasitic") current flowing across region(s) of semiconductor structure/device in which no current should be flowing; e.g. current flowing across the gate oxide in MOS structure.
p-n junction  p-type and n-type semiconductors are brought to contact in order to create a potential barrier; height of the potential barrier is controlled by the voltage applied between p- and n-type regions; in homojunctions p- and n-type regions are formed in the same semiconductor typically by locally changing its doping from p to n, or vice versa; in heterojunctions p- and n-type regions are made out of different semicodnuctors.
reverse bias  bias at which potential barrier ar the p-n or metal-semiconductor junction is increased and currenet flow from one region to another is restricted.
gate oxide  a layer of very thin oxide sandwiched between semiconductor and gate contact in MOS devices; can be as thin as 1 nm in advance silicon digital integrated circuits and as thick as 70 nm in discrete power MOSFETs; typically thermally grown SiO2, often nitrided; in ultra-small geometry CMOS ICs SiO2 can be replaced with dielectrics fetauring higher than SiO2 dielectric constant.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.