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Term (Index) Definition
lattice matched structure  structure consisting of ultra-thin layers of single crystal semiconductors (typically III-V)of different chemical composition, but featuring the same lattice constant; allows changes of energy gap from layer to layer maintaining the same crystallographic structure throughtout the entire stack; very common in advanced LEDs and laser diodes.
bandgap engineering  processes in which energy gap of semiconductor is altered in the desired way by changing chemical composition of semiconductor; e.g. by adding Al bandgap of GaAs can be altered; used in superlattice fabrication.
superlattice  semiconductor structure comprising of several ultra-thin layers (atomic layers) engineered to obtain specific electronic and photonic properties; slight modifications of chemical composition of each layer result in slight variations of energy bandgap from layer to layer: bandgap engineering; fabrication of superlattices requires high-precision heteroepitaxial deposition methods such as MBE and MOCVD; typically involves III-V semiconductors.
lattice constant , a  distance between atoms in cubic-cell crystals; measure of structural compatibility of various crystals.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.