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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
junction depth  depth (measured from the surface)of the plane in p-n junction at which concentration of acceptors is equal to the concentration of donors.
doping  introduction of dopant into semiconductor for the purpose of altering its electrical properties; allows control of resistivity/conductivity of semiconductor by several orders of magnitude; also used to convert p-type material into n-type material and vice versa.
metallurgical junction  plane in the p-n junction at which concentration of acceptors is the same as concentration of donors.
metallurgical junction  term refers to p-n junction; interface between the n-doped and p-doped regions in the junction, or the plane in which ND = NA.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.