Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
interstitial diffusion  diffusion mechanism in which diffusant moves in between host atoms in the lattice; low activation energy process; interstitial diffusants (e.g. gold in silicon) feature high diffusion coefficient.
diffusion coefficient, D  determines rate with which element moves in a given solid by diffusion; depends strongly on temperature; expressed in cm2/sec; varies between elements by orders of magnitude, e.g. in the case of diffusion in silicon diffusion coefficient for gold, Au, is in the range of 10-3 cm2/sec (fast diffusant) while for Sb is in the range of 10-17 cm2/sec.
substitutional diffusion  diffusion mechanism in which diffusant substitutes for the host atoms by displacing them from their lattice sites; high activation energy process; substitutional diffusants (e.g. all p- and n-type dopants in silicon) feature low diffusion coefficient.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.