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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
interconnect  conductor (typically metal) line connecting elements of an integrated circuit; in very high density integrated circuits interconnect lines form multilevel network; in advanced silicon ICs interconnect lines as are made out of copper.
aluminum, contaminant, Al  common metallic contaminant in silicon processing; main source: APM cleaning solution; slows down thermal oxidation of silicon if not removed prior to oxidation; affects oxide reliability; detection and measurement on Si surface by TOF-SIMS.
copper, Cu  (i) metal of choice for interconnects in advanced ICs; resistivity the lowest among metals - 1.7 µohm-cm; advantages over aluminum: no electromigration and lower resistivity; (ii) defect causing contaminant if allowed to penetrate silicon; very fast diffusant in silicon; results in reduced lifetime of minority carriers.
Term (Index) Definition
copper interconnect  an interconnect scheme in advanced integrated circuits using copper as a metal for interconnect lines.
copper, Cu  (i) metal of choice for interconnects in advanced ICs; resistivity the lowest among metals - 1.7 µohm-cm; advantages over aluminum: no electromigration and lower resistivity; (ii) defect causing contaminant if allowed to penetrate silicon; very fast diffusant in silicon; results in reduced lifetime of minority carriers.
Term (Index) Definition
interconnect density,  a measure of complexity of a multi-level metallization scheme in advanced ICs; expressed in m/cm2/level.
Term (Index) Definition
multilevel interconnect, MLI  interconnect scheme in integrated circuits implemented in several levels; metal lines are stacked into several levels (as many as ten and more), are electrically isolated by interlayer low-k dielectric, and are vertically interconnected through vias; MLI is needed to save space on the surface of the chip and to reduce RC losses in very high density integrated circuits.
copper, Cu  (i) metal of choice for interconnects in advanced ICs; resistivity the lowest among metals - 1.7 µohm-cm; advantages over aluminum: no electromigration and lower resistivity; (ii) defect causing contaminant if allowed to penetrate silicon; very fast diffusant in silicon; results in reduced lifetime of minority carriers.
multilevel metallization  see "multilevel interconnect"
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright © J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.