Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
implantation energy  kinetic energy of implanted ions established through acceleration; determines depth of solid penetration by the ions, and hence, depth of junction formed; quantitatively expressed by projected range Rp.
projected range  term used in ion implantation terminology; p.r. is a distance from the surface of implanted material at which implanted ions reach maximum concentration (concentration peak).
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.