Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
implantation damage  during ion implantation accelerated ions collide with atoms in the target material and displace them from their original lattice sites; after implantation crystallographic order of the implanted material is being restored by a brief anneal (typically RTP) at the temperature of 800 oC or higher.
ion implantation  ions accelerated toward solid surface penetrate solid up to certain depth (see "projected range") determined by ion energy; used to introduce dopants, to form buried layers and to modify solid surfaces; concentration of implanted dopant atoms depends on ion dose; i.i. is the most common technique of dopant introduction in advanced semiconductor manufacturing.

Reference: See ion implantation animation
RTA  Rapid Thermal Annealing; annealing process carried out for a very short time; typically performed for the purpose of improving properties of materials and/or device structures.
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