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Term (Index) Definition
immersion lithography  photolithography techniques in which space between the final projection lens and the wafer in the exposure tool is filled with water rather than air; use of medium featuring higher refractive index n ( n=1 for air while n=1.44 for water) increases numerical aperture (NA) of the optical lithography tool, and hence, increases resolution of the pattern transfer process.

Reference: See Semiconductor Notes for more information
numerical aperture, NA  parameter defining geometry of the objective lens used in projection printing in photolithography; determines lens' ability to collect light diffracted from a mask/reticle; attempts are continuously made to keep NA as high as possible (see immersion lithography for instance).
refractive index, n  important material parameter; unitless; defined as a ratio of speed of light in free space over speed of light in the medium; describes optical characteristics of a medium (e.g. of a given solid); e.g. for Si n=3.42, GaAs n=3.3 and SiO2 n=1.46.
Term (Index) Definition
immersion lithography 193i,  193 nm immersion lithography, i.e. immersion lithography using 193 nm exposure wavelength.
immersion lithography  photolithography techniques in which space between the final projection lens and the wafer in the exposure tool is filled with water rather than air; use of medium featuring higher refractive index n ( n=1 for air while n=1.44 for water) increases numerical aperture (NA) of the optical lithography tool, and hence, increases resolution of the pattern transfer process.

Reference: See Semiconductor Notes for more information
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