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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
ideal MOS  "ideal" MOS (Metal Oxide Semiconductor) is a structure for which it is assumed that: (i) there is no work function difference between metal gate and semiconductor, (ii) there is no charge at the semiconductor-oxide interface, and (iii) there is no charge in the oxide; all this means that with no voltage applied to the gate, energy bands in the MOS structure are horizontal, or flat; any departure from the "ideal" condition will change potential distribution across the structure.
work function difference  defines characteristics of contact between two materials featuring different work function; for conductor-semiconductor contact w.f.d. determines height of potential barrier in the contact plane, and hence, determines whether contact is ohmic or rectifying.
oxide fixed charge, Qf  charge in Si-SiO2 structure; located in the oxide in the immediate vicinity of Si surface; does not move and exchange charge with Si, hence, "fixed"; associated with incompletely oxidized silicon or in other words, with excess silicon; lower density at higher temperature of oxidation; can be lowered by post-oxidation anneal in N2 or Ar; fixed charge alters characteristics of Si-SiO2 based MOS gate stacks.
oxide trapped charge  charge centers in SiO2 and other gate dielectrics which are electrically activated/de-activated by trapping/de-trapping charge carriers injected into the oxide either from the gate or from the substrate; causes instabilities of MOSFETs characteristics.
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