Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
ideal MOS  "ideal" MOS (Metal Oxide Semiconductor) is a structure for which it is assumed that: (i) there is no work function difference between metal gate and semiconductor, (ii) there is no charge at the semiconductor-oxide interface, and (iii) there is no charge in the oxide; all this means that with no voltage applied to the gate, energy bands in the MOS structure are horizontal, or flat; any departure from the "ideal" condition will change potential distribution across the structure.
work function difference  defines characteristics of contact between two materials featuring different work function; for conductor-semiconductor contact w.f.d. determines height of potential barrier in the contact plane, and hence, determines whether contact is ohmic or rectifying.
oxide fixed charge, Qf  charge in Si-SiO2 structure; located in the oxide in the immediate vicinity of Si surface; does not move and exchange charge with Si, hence, "fixed"; associated with incompletely oxidized silicon or in other words, with excess silicon; lower density at higher temperature of oxidation; can be lowered by post-oxidation anneal in N2 or Ar; fixed charge alters characteristics of Si-SiO2 based MOS gate stacks.
oxide trapped charge  charge centers in SiO2 and other gate dielectrics which are electrically activated/de-activated by trapping/de-trapping charge carriers injected into the oxide either from the gate or from the substrate; causes instabilities of MOSFETs characteristics.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.