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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
high-k dielectric  dielectric material featuring dielectric constant k higher than 3.9 which is k of SiO2; used as gate dielectric (amorphous) in MOS devices and in storage capacitors; high k increases capacitance, or keeps in unchanged at the reduced area of MOS gate and gate dielectric sufficiently thick to prevent excessive tunneling current.

Reference: See Semiconductor Notes for more information
alternative dielectrics  dielectrics featuring dielectric constant k > 3.9 (3.9 is a dielectric constant of SiO2)and acting as gate oxides in silicon MOS devices instead of SiO2; referred to as "high-k dielectrics"; also dielectrics featuring dielectric constant k < 3.9 and used as ILD; referred to as "low-k dielectrics".
BST  (BaSr)TiO3, barium strontium titanate, dielectric featuring high k (in the range 160-600) at thicknesses exceeding about 40 nm; displays ferroelectric properties; used in storage capacitors, can be deposited by the variety of methods including misted deposition (LSMCD), MOCVD and sputtering.
hafnium oxide, HfO2  high-k dielectric considered for next generation MOS gates; dielectric constant k ~25; limited thermal stability with silicon; thermally stable up to 700oC.
hafnium silicate, HfSiO4  high-k dielectric considered for next generation MOS gates, k~15-18; thermodynamically stable with silicon.
PZT  Lead-Zirconate-Titanate; dielectric material featuring dielectric constant k >1000.
tantalum pentoxide, Ta2O5  oxide featuring dielectric constant k ~ 25 ("high-k" dielectric); energy gap Eg=4.2 eV; considered as an alternative to SiO2 dielectric for next generation CMOS devices; not any longer, however, due to the lack of thermal stability with silicon which makes its deposition on Si substrate without formation of an excessive interfacial SiOx impossible.
titanium oxide, TiO3  dielectric material featuring dielectric constant k=20-85 ("high-k" dielectric); not thermally stable with silicon, and hence, not used as a high-k dielectric for MOS gates.
zirconuim oxide, zirconia, ZrO2  dielectric featuring dielectric constant k in the range of 20-25; thermodynamically stable with silicon but tends to crystallize at about 700 o; considered as an alternative gate dielectric for next generation MOS technology.
zirconium silicate, ZrSiO4  dielectric material featuring dielectric constant about 15; thermodynamically stable with Si; in contact with Si combines characteristics of silicon dioxide,SiO2,and zirconium oxide, ZrO2; considered to be among prime candidates for a gate dielectric in next generation CMOS devices.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.