Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
halo implantation,  used in CMOS fabrication to supress punch-through effect; low energy, low current implantation carried out at large incident angle so that implanted dopants penetrate underneath the edge of the MOS gate stack.
CMOS  Complementary Metal Oxide Semiconductor structure; consists of N-channel and P-channel MOS transistors; due to very low power consumption and dissipation as well minimization of the current in "off" state CMOS is a very effective device configuration for implementation of digital functions; CMOS is a key device in state-of-the-art silicon microelectronics.
ion implantation  ions accelerated toward solid surface penetrate solid up to certain depth (see "projected range") determined by ion energy; used to introduce dopants, to form buried layers and to modify solid surfaces; concentration of implanted dopant atoms depends on ion dose; i.i. is the most common technique of dopant introduction in advanced semiconductor manufacturing.

Reference: See ion implantation animation
MOS gate,  metal (or polysilicon) - gate dielectric - semiconductor part of the MOSFET which controls current flowing between source and drain; in short: a gate stack.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.