Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
hafnium silicate, HfSiO4  high-k dielectric considered for next generation MOS gates, k~15-18; thermodynamically stable with silicon.
alternative dielectrics  dielectrics featuring dielectric constant k > 3.9 (3.9 is a dielectric constant of SiO2)and acting as gate oxides in silicon MOS devices instead of SiO2; referred to as "high-k dielectrics"; also dielectrics featuring dielectric constant k < 3.9 and used as ILD; referred to as "low-k dielectrics".
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.