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Term (Index) Definition
gettering extrinsic  semiconductor wafer is exposed to external physical interactions designed to induce stress at the back surface of the wafer; during subsequent anneal defects and/or contaminants will be moving preferentially toward the stressed region, and hence, away from the top surface of the wafer; "denuded zone" is formed at the top surface.
gettering  process which moves contaminants and/or defects in semiconductor into its bulk and away from its top surface and traps them there; creates "denuded zone" at the top surface.

Reference: See more on gettering
gettering intrinsic  gettering accomplished solely (no external physical interactions) by means of thermal treatments of the wafer applied in strictly executed sequence; forces precipitation of contaminants away from the top surface.
metallic contaminant  atoms of metals deposited on the Si surface during device processing as a reult of process malfunction; common metallic contaminants: Fe, Al, Cu, Ca, Na; originate from process chemicals, ambient, and tools; major reliability problem; should not be allowed on Si surface in concentrations above 109 cm-2; designated cleans are applied to remove metallic contaminants from the surface.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.