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Term (Index) Definition
gettering  process which moves contaminants and/or defects in semiconductor into its bulk and away from its top surface and traps them there; creates "denuded zone" at the top surface.

Reference: See more on gettering
denuded zone, DZ  very thin region in semiconductor substrate adjacent to its surface cleared from contaminants and/or defects by gettering; devices are built into denuded zone.
external, extrinsic gettering  process in which gettering of contaminants and defects in semiconductor wafer is accomplished by stressing its back surface (by inducing damage or depositing material featuring different than semiconductor thermal expansion coefficient) and then subjecting wafer to thermal treatment; contaminants and/or defects are relocated toward back surface and away from the front surface where so-called "denuded zone" is formed as a result.
Term (Index) Definition
external, extrinsic gettering  process in which gettering of contaminants and defects in semiconductor wafer is accomplished by stressing its back surface (by inducing damage or depositing material featuring different than semiconductor thermal expansion coefficient) and then subjecting wafer to thermal treatment; contaminants and/or defects are relocated toward back surface and away from the front surface where so-called "denuded zone" is formed as a result.
denuded zone, DZ  very thin region in semiconductor substrate adjacent to its surface cleared from contaminants and/or defects by gettering; devices are built into denuded zone.
gettering  process which moves contaminants and/or defects in semiconductor into its bulk and away from its top surface and traps them there; creates "denuded zone" at the top surface.

Reference: See more on gettering
Term (Index) Definition
gettering extrinsic  semiconductor wafer is exposed to external physical interactions designed to induce stress at the back surface of the wafer; during subsequent anneal defects and/or contaminants will be moving preferentially toward the stressed region, and hence, away from the top surface of the wafer; "denuded zone" is formed at the top surface.
gettering  process which moves contaminants and/or defects in semiconductor into its bulk and away from its top surface and traps them there; creates "denuded zone" at the top surface.

Reference: See more on gettering
gettering intrinsic  gettering accomplished solely (no external physical interactions) by means of thermal treatments of the wafer applied in strictly executed sequence; forces precipitation of contaminants away from the top surface.
metallic contaminant  atoms of metals deposited on the Si surface during device processing as a reult of process malfunction; common metallic contaminants: Fe, Al, Cu, Ca, Na; originate from process chemicals, ambient, and tools; major reliability problem; should not be allowed on Si surface in concentrations above 109 cm-2; designated cleans are applied to remove metallic contaminants from the surface.
Term (Index) Definition
gettering intrinsic  gettering accomplished solely (no external physical interactions) by means of thermal treatments of the wafer applied in strictly executed sequence; forces precipitation of contaminants away from the top surface.
gettering  process which moves contaminants and/or defects in semiconductor into its bulk and away from its top surface and traps them there; creates "denuded zone" at the top surface.

Reference: See more on gettering
gettering extrinsic  semiconductor wafer is exposed to external physical interactions designed to induce stress at the back surface of the wafer; during subsequent anneal defects and/or contaminants will be moving preferentially toward the stressed region, and hence, away from the top surface of the wafer; "denuded zone" is formed at the top surface.
oxygen in silicon  oxygen finds its way into silicon during Czochralski (CZ) single-crystal growth process; in moderate concentration (below 1017 cm3) oxygen improves mechanical properties of a silicon wafer; excess oxygen may precipitate in silicon forming electrically active centers.
Term (Index) Definition
intrinsic gettering  process in which gettering of contaminants and/or defects in semiconductor is accomplished by the series of heat treatments and without any external interactions with a wafer.
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