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Semiconductor Glossary book, click here to see new prices!
With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.
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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.
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gettering
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process which moves contaminants and/or defects in semiconductor into its bulk and away from its top surface and traps them there; creates "denuded zone" at the top surface.
Reference: See more on gettering
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Term (Index)
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Definition
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gettering extrinsic
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semiconductor wafer is exposed to external physical interactions designed to induce stress at the back surface of the wafer; during subsequent anneal defects and/or contaminants will be moving preferentially toward the stressed region, and hence, away from the top surface of the wafer; "denuded zone" is formed at the top surface.
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gettering
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process which moves contaminants and/or defects in semiconductor into its bulk and away from its top surface and traps them there; creates "denuded zone" at the top surface.
Reference: See more on gettering
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gettering intrinsic
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gettering accomplished solely (no external physical interactions) by means of thermal treatments of the wafer applied in strictly executed sequence; forces precipitation of contaminants away from the top surface.
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metallic contaminant
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atoms of metals deposited on the Si surface during device processing as a reult of process malfunction; common metallic contaminants: Fe, Al, Cu, Ca, Na; originate from process chemicals, ambient, and tools; major reliability problem; should not be allowed on Si surface in concentrations above 109 cm-2; designated cleans are applied to remove metallic contaminants from the surface.
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Term (Index)
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Definition
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gettering intrinsic
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gettering accomplished solely (no external physical interactions) by means of thermal treatments of the wafer applied in strictly executed sequence; forces precipitation of contaminants away from the top surface.
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gettering
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process which moves contaminants and/or defects in semiconductor into its bulk and away from its top surface and traps them there; creates "denuded zone" at the top surface.
Reference: See more on gettering
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gettering extrinsic
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semiconductor wafer is exposed to external physical interactions designed to induce stress at the back surface of the wafer; during subsequent anneal defects and/or contaminants will be moving preferentially toward the stressed region, and hence, away from the top surface of the wafer; "denuded zone" is formed at the top surface.
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oxygen in silicon
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oxygen finds its way into silicon during Czochralski (CZ) single-crystal growth process; in moderate concentration (below 1017 cm3) oxygen improves mechanical properties of a silicon wafer; excess oxygen may precipitate in silicon forming electrically active centers.
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Term (Index)
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Definition
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intrinsic gettering
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process in which gettering of contaminants and/or defects in semiconductor is accomplished by the series of heat treatments and without any external interactions with a wafer.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.
This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.
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