Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
germanium, Ge  elemental semiconductor from the IVth group of periodic table, Eg = 0.66 eV, indirect bandgap, advantage: electron/hole mobility: 3900/1900 cm2/V-s higher than in Si; in contrast to Si does not form high quality native oxide but works well with high-k dielectrics to form MOS/CMOS structures; also increasingly important in conjunction with silicon as SiGe.

Reference: See more information on Ge...
elemental semiconductor  single element semiconductor; element from the group IV of periodic table: Si, Ge, C, Sn.
silicon germanium, SiGe  an alloy featuring energy gap narrower than Si and wider than Ge; energy gap varies as a function of Ge concentration in SiGe; features increased electron mobility as compared to Si; epitaxially deposited to form base in HBT (Si emitter); significant improvement of HBT's characteristics over all-Si bipolar transistor; in CMOS technology SiGe is used to form strained Si layer to act as a channel.

Reference: SemiOneSource,Notes
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.