Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
germanium, Ge  elemental semiconductor from the IVth group of periodic table, Eg = 0.66 eV, indirect bandgap, advantage: electron/hole mobility: 3900/1900 cm2/V-s higher than in Si; in contrast to Si does not form high quality native oxide but works well with high-k dielectrics to form MOS/CMOS structures; also increasingly important in conjunction with silicon as SiGe.

Reference: See more information on Ge...
elemental semiconductor  single element semiconductor; element from the group IV of periodic table: Si, Ge, C, Sn.
silicon germanium, SiGe  an alloy featuring energy gap narrower than Si and wider than Ge; energy gap varies as a function of Ge concentration in SiGe; features increased electron mobility as compared to Si; epitaxially deposited to form base in HBT (Si emitter); significant improvement of HBT's characteristics over all-Si bipolar transistor; in CMOS technology SiGe is used to form strained Si layer to act as a channel.

Reference: SemiOneSource,Notes
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.