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Term (Index) Definition
gate oxidation,  process of thermal oxidation of silicon which forms an oxide for MOS gates; typically carried out in dry oxygen at the temperature determined by the desired thickness of the oxide.
gate oxide  a layer of very thin oxide sandwiched between semiconductor and gate contact in MOS devices; can be as thin as 1 nm in advance silicon digital integrated circuits and as thick as 70 nm in discrete power MOSFETs; typically thermally grown SiO2, often nitrided; in ultra-small geometry CMOS ICs SiO2 can be replaced with dielectrics fetauring higher than SiO2 dielectric constant.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.