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Term (Index) Definition
gate length  effective length of the distance in the near-surface region of Si substrate between edges of the drain and source regions in the field effect transistor (including MOSFET and CMOS).
channel length  distance between source and drain in Field Effect Transistors; shorter the channel faster switching by the FET can be achieved; reduction of the channel length in MOSFETs is a driving force behind the progress in microelectronics.
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