Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
gate dielectric  very thin layer of an insulator sandwiched between semiconductor and gate contact in MOS devices; in silicon technology it is typically a thermally grown SiO2, often nitrided; depending on application it can be as thin as 1.0-1.5 nm (advanced digital integrated circuits) and as thick as 50 nm (discrete power MOSFETs); in ultra-small geometry CMOS ICs SiO2 is replaced with insulators featuring higher than SiO2 dielectric constant; hafnium based dielectrics (oxide or silicate) are materials of choice in this case.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.