Semiconductor Glossary, Developed Semi OneSource.

Check out the new weBLOG!

With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

Search For Term

Term (Index) Definition
gate contact  conducting material (metal, poly Si, or silicide) in the gate structure.
gate stack  gate metal (conductor)- gate oxide structure in a MOSFET/CMOS.
silicide, silicides  alloys of silicon and metals; contact materials in silicon device manufacturing; e.g. TiSi2, CoSi2, NiSi; combine advantageous features of metal contacts (e.g significantly lower resistivity than poly-Si) and poly-Si contacts(e.g. no electromigration).
poly - Si gate  polycrystalline Si gate commonly used as a gate contact in MOS/CMOS devices; used instead of metal gates because work function of poly-Si matches work function of Si substrate much closer than metals, hence, threshold voltage of transistor is significantly lower; also, poly Si is more resistant to temperature than, for instance, Al; drawback: in spite of being very heavily doped (and essentially acting as a conductor) poly-Si features resistivity two orders of magnitude higher than typical metals; moreover, poly-Si gets easily oxidized at the interface with gate oxide which is unacceptable in the case high-k dielectric is used as a gate oxide.
Hit Count=

Back To Top! 

Back To Home!

Hit Count=
Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.