Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
gallium arsenide, GaAs  III-V compound semiconductor, after silicon second the most common semiconductor, energy gap Eg = 1.43 eV, direct; crystal structure - zinc blend, lattice constant 0.565 nm, index of refraction 3.3, density 5.32 g/cm3, dielectric constant 12.9, intrinsic carrier concentration 2.1 x 106 cm-3, mobility of electrons and holes at 300 K - 8500 and 400 cm2/V-s, thermal conductivity 0.46 W/cm-oC, thermal expansion coefficient 6.86 x 10-6 1/oC; thermally unstable above 600 oC due to As evaporation; does not form sufficient quality native oxide; mechanically fragile; due to direct bandgap commonly used to fabricate light emitting devices; also foundation of the variety of high-speed electronic devices; bandgap can be readily engineered by forming ternary compounds based on GaAs, e.g. AlGaAs.
AIII-BV, III-V, semiconductors  III-V semiconductors are synthesized using elements from 3rd and 5th group of periodic table; e.g. GaAs, GaP, GaN, GaAlAs, InP, InSb, etc.

Reference: SemiconductorPeriodicTable
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.