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Term (Index) Definition
full-field exposure  exposure of the entire wafer during photolithography processes through properly designed mask; used in contact and proximity printing; as oposed to step-and-repeat exposurep process used in steppers.
contact printing  photolithographic process in which during illumination mask and a wafer are in physical contact; allows resolution below 1 micrometer depending on the wavelength of radiation but may cause mask damage; in advanced microelectronic manufacturing replaced with projection printing (steppers).
proximity printing  exposure techniques used in photolithography in which during exposure mask is not in contact with resist (is separated from the wafer surface by some 20 m); mask damage is less likely than during contact printing, but resolution of pattern transfer is limited to about 2 m.
step and repeat projection  resist exposure mode in lithographic processes in which the same pattern is projected on the surface of the wafer in the series of consecutive exposures instead of the exposure of the entire wafer.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.