Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
epitaxy by CVD  epitaxial growth implemented by means of chemical vapor deposition, i.e. by chemical reaction in the gas-phase product of which is a solid to be epitaxially deposited on the exposed substrate; typically carried out at temperatures above 1000oC; with extremely thorough surface preparation and adequate selection of reactants temperature of CVD epitaxy can be reduced to as low as 500oC -600oC.
Molecular Beam Epitaxy, MBE  physical deposition process (basically evaporation) carried out in ultra-high vacuum (below 10-8 torr) and at substrate temperature typically not exceeding 800 oC; due to unobstructed (molecular) flow of species to be deposited and chemical cleanliness of the substrate surface highly controlled growth of ultra-thin epitaxial layers is possible; the highest precision deposition method used in semiconductor processing.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.