Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
epitaxy by CVD  epitaxial growth implemented by means of chemical vapor deposition, i.e. by chemical reaction in the gas-phase product of which is a solid to be epitaxially deposited on the exposed substrate; typically carried out at temperatures above 1000oC; with extremely thorough surface preparation and adequate selection of reactants temperature of CVD epitaxy can be reduced to as low as 500oC -600oC.
Molecular Beam Epitaxy, MBE  physical deposition process (basically evaporation) carried out in ultra-high vacuum (below 10-8 torr) and at substrate temperature typically not exceeding 800 oC; due to unobstructed (molecular) flow of species to be deposited and chemical cleanliness of the substrate surface highly controlled growth of ultra-thin epitaxial layers is possible; the highest precision deposition method used in semiconductor processing.
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