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Term (Index) Definition
epitaxy  process by which thin layer of single-crystal material is deposited on single-crystal substrate; epitaxial growth occurs in such way that the crystallographic structure of the substrate is reproduced in the growing material; also crystalline defects of the substrate are reproduced in the growing material.
epitaxy by CVD  epitaxial growth implemented by means of chemical vapor deposition, i.e. by chemical reaction in the gas-phase product of which is a solid to be epitaxially deposited on the exposed substrate; typically carried out at temperatures above 1000oC; with extremely thorough surface preparation and adequate selection of reactants temperature of CVD epitaxy can be reduced to as low as 500oC -600oC.
heteroepitaxy  epitaxial deposition process in which chemical composition of epi material is different than chemical composition of the substrate; e.g. AlGaAs epi on GaAs substrate or SiGe epi on Si substrate.
homoepitaxy  epitaxial deposition process in which chemical composition of epi material and the substrate are the same; e.g. Si epi layer on Si substrate.
MOCVD  Metal-Organic Chemical Vapor Deposition; CVD process which uses metal-organic compounds as source materials; metal-organics thermally decompose at temperatures lower than other metal containing compounds; method often used in epitaxial growth of very thin films of III-V semiconductors.
Molecular Beam Epitaxy, MBE  physical deposition process (basically evaporation) carried out in ultra-high vacuum (below 10-8 torr) and at substrate temperature typically not exceeding 800 oC; due to unobstructed (molecular) flow of species to be deposited and chemical cleanliness of the substrate surface highly controlled growth of ultra-thin epitaxial layers is possible; the highest precision deposition method used in semiconductor processing.
selective epitaxy  epitaxial growth on the substrate which is only partially a single-crystal material; for instance in the case of single crystal Si partially covered with oxide, Si will grow epitaxially only (selectively) on the surface of a single-crystal Si.
Term (Index) Definition
Atomic Layer Epitaxy, ALE  atomic layer deposition process which forms epitaxial layer.
Atomic Layer Deposition, ALD  a deposition method in which deposition of each atomic layer of material is controlled by a pre-deposited layer of precursor; precursors and various components of the film are introduced alternately; method features 100 % step coverage and very good conformality; the method is used for instance in deposition of alternative dielectrics for MOS gates.
Term (Index) Definition
epitaxy by CVD  epitaxial growth implemented by means of chemical vapor deposition, i.e. by chemical reaction in the gas-phase product of which is a solid to be epitaxially deposited on the exposed substrate; typically carried out at temperatures above 1000oC; with extremely thorough surface preparation and adequate selection of reactants temperature of CVD epitaxy can be reduced to as low as 500oC -600oC.
Molecular Beam Epitaxy, MBE  physical deposition process (basically evaporation) carried out in ultra-high vacuum (below 10-8 torr) and at substrate temperature typically not exceeding 800 oC; due to unobstructed (molecular) flow of species to be deposited and chemical cleanliness of the substrate surface highly controlled growth of ultra-thin epitaxial layers is possible; the highest precision deposition method used in semiconductor processing.
Term (Index) Definition
Molecular Beam Epitaxy, MBE  physical deposition process (basically evaporation) carried out in ultra-high vacuum (below 10-8 torr) and at substrate temperature typically not exceeding 800 oC; due to unobstructed (molecular) flow of species to be deposited and chemical cleanliness of the substrate surface highly controlled growth of ultra-thin epitaxial layers is possible; the highest precision deposition method used in semiconductor processing.
epitaxy  process by which thin layer of single-crystal material is deposited on single-crystal substrate; epitaxial growth occurs in such way that the crystallographic structure of the substrate is reproduced in the growing material; also crystalline defects of the substrate are reproduced in the growing material.
superlattice  semiconductor structure comprising of several ultra-thin layers (atomic layers) engineered to obtain specific electronic and photonic properties; slight modifications of chemical composition of each layer result in slight variations of energy bandgap from layer to layer: bandgap engineering; fabrication of superlattices requires high-precision heteroepitaxial deposition methods such as MBE and MOCVD; typically involves III-V semiconductors.
Term (Index) Definition
selective epitaxy  epitaxial growth on the substrate which is only partially a single-crystal material; for instance in the case of single crystal Si partially covered with oxide, Si will grow epitaxially only (selectively) on the surface of a single-crystal Si.
epitaxy  process by which thin layer of single-crystal material is deposited on single-crystal substrate; epitaxial growth occurs in such way that the crystallographic structure of the substrate is reproduced in the growing material; also crystalline defects of the substrate are reproduced in the growing material.
Term (Index) Definition
solid-phase epitaxy, SPE,  process in which, as a result of a heat treatment, amorphized phase in the solid in contact with its single-crystal phase, re-crystallizes into a single-crystal.
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