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Semiconductor Glossary book, click here to see new prices!
With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.
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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.
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Term (Index)
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Definition
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epitaxy by CVD
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epitaxial growth implemented by means of chemical vapor deposition, i.e. by chemical reaction in the gas-phase product of which is a solid to be epitaxially deposited on the exposed substrate; typically carried out at temperatures above 1000oC; with extremely thorough surface preparation and adequate selection of reactants temperature of CVD epitaxy can be reduced to as low as 500oC -600oC.
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Molecular Beam Epitaxy, MBE
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physical deposition process (basically evaporation) carried out in ultra-high vacuum (below 10-8 torr) and at substrate temperature typically not exceeding 800 oC; due to unobstructed (molecular) flow of species to be deposited and chemical cleanliness of the substrate surface highly controlled growth of ultra-thin epitaxial layers is possible; the highest precision deposition method used in semiconductor processing.
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Term (Index)
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Definition
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Molecular Beam Epitaxy, MBE
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physical deposition process (basically evaporation) carried out in ultra-high vacuum (below 10-8 torr) and at substrate temperature typically not exceeding 800 oC; due to unobstructed (molecular) flow of species to be deposited and chemical cleanliness of the substrate surface highly controlled growth of ultra-thin epitaxial layers is possible; the highest precision deposition method used in semiconductor processing.
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epitaxy
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process by which thin layer of single-crystal material is deposited on single-crystal substrate; epitaxial growth occurs in such way that the crystallographic structure of the substrate is reproduced in the growing material; also crystalline defects of the substrate are reproduced in the growing material.
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superlattice
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semiconductor structure comprising of several ultra-thin layers (atomic layers) engineered to obtain specific electronic and photonic properties; slight modifications of chemical composition of each layer result in slight variations of energy bandgap from layer to layer: bandgap engineering; fabrication of superlattices requires high-precision heteroepitaxial deposition methods such as MBE and MOCVD; typically involves III-V semiconductors.
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Term (Index)
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Definition
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selective epitaxy
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epitaxial growth on the substrate which is only partially a single-crystal material; for instance in the case of single crystal Si partially covered with oxide, Si will grow epitaxially only (selectively) on the surface of a single-crystal Si.
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epitaxy
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process by which thin layer of single-crystal material is deposited on single-crystal substrate; epitaxial growth occurs in such way that the crystallographic structure of the substrate is reproduced in the growing material; also crystalline defects of the substrate are reproduced in the growing material.
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Term (Index)
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Definition
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solid-phase epitaxy, SPE,
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process in which, as a result of a heat treatment, amorphized phase in the solid in contact with its single-crystal phase, re-crystallizes into a single-crystal.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.
This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.
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