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Term (Index) Definition
enhancement techniques  term typically refers to techniques employed to extend use of photolithography into sub-100 nm regime; e.g., phase-shift masks, immersion photolithography, new photoresist formulations, etc.
phase shift mask, PSM  a conventional mask to which layer of material featuring desired refractive index and thickness is locally added in order to shift phase of light passing through transparent portion of the mask; phase shifting increases resolution of pattern transfer by destructive interference preventing resist exposure in the regions in which it should not be exposed.
immersion lithography  photolithography techniques in which space between the final projection lens and the wafer in the exposure tool is filled with water rather than air; use of medium featuring higher refractive index n ( n=1 for air while n=1.44 for water) increases numerical aperture (NA) of the optical lithography tool, and hence, increases resolution of the pattern transfer process.

Reference: See Semiconductor Notes for more information
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