Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
elevated source  source region in MOSFET/CMOS is extended above the surface of the wafer by means of selective epitaxy; needed in ultra-short channel MOSFETs where source region must be extremely shallow (less than about 30 nm); e.g. in ultra-thin SOI CMOS devices.
elevated drain  drain region in MOSFET/CMOS is extended above the surface of the wafer by means of selective epitaxy; needed in ultra-short channel MOSFETs where drain region must be extremely shallow (less than about 30 nm); e.g. in ultra-thin SOI CMOS devices.
source  one of three terminals in Field Effect Transistors; a heavily doped region from which majority carriers are flowing into the channel.
elevated drain  drain region in MOSFET/CMOS is extended above the surface of the wafer by means of selective epitaxy; needed in ultra-short channel MOSFETs where drain region must beextremely shallow (as thin as about 30 nm); e.g. in ultra-thin SOI CMOS devices; same concept as raised drain.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.