Semiconductor Glossary, Developed Semi OneSource.
Google
 


Check out the new SemiconductorGlossary.com weBLOG!

Semiconductor Glossary book, click here to see new prices!


With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


Search For Term

Term (Index) Definition
elevated drain  drain region in MOSFET/CMOS is extended above the surface of the wafer by means of selective epitaxy; needed in ultra-short channel MOSFETs where drain region must beextremely shallow (as thin as about 30 nm); e.g. in ultra-thin SOI CMOS devices; same concept as raised drain.
drain  heavily doped region in semiconductor substrates located at the end of the channel in Field Effect Transistors; carriers are flowing out of the transistor through the drain.
drain engineering  modifications of the drain and channel region adjacent to the drain in integrated MOS and CMOS devices; goal is to improve characteristics of MOS transistors with ultra-short channel.
elevated source  source region in MOSFET/CMOS is extended above the surface of the wafer by means of selective epitaxy; needed in ultra-short channel MOSFETs where source region must be extremely shallow (less than about 30 nm); e.g. in ultra-thin SOI CMOS devices.
Term (Index) Definition
elevated drain  drain region in MOSFET/CMOS is extended above the surface of the wafer by means of selective epitaxy; needed in ultra-short channel MOSFETs where drain region must be extremely shallow (less than about 30 nm); e.g. in ultra-thin SOI CMOS devices.
drain  heavily doped region in semiconductor substrates located at the end of the channel in Field Effect Transistors; carriers are flowing out of the transistor through the drain.
drain engineering  modifications of the drain and channel region adjacent to the drain in integrated MOS and CMOS devices; goal is to improve characteristics of MOS transistors with ultra-short channel.
elevated source  source region in MOSFET/CMOS is extended above the surface of the wafer by means of selective epitaxy; needed in ultra-short channel MOSFETs where source region must be extremely shallow (less than about 30 nm); e.g. in ultra-thin SOI CMOS devices.
Hit Count=

Back To Top! 

Back To Home!







Hit Count=
Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.