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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
electron beam (e-beam) lithography, EBL  lithography technique which uses focused beam of electrons to expose the resist; no mask is used as pattern is "written" directly into the resist by very fast scanning of electron beam; pattern transfer resolution below 100 nm; resolution is limited by the proximity effect; EBL is commonly used to manufacture high resolution masks for photolithography and X-ray lithography.
lithography  process used to transfer pattern from the mask/reticle to the layer of resist deposited on the surface of the wafer; kind of lithography depends on the wavelength of radiation used to expose resist: photolithography (or optical lithography) uses UV radiation, X-ray lithography uses X-ray, e-beam lithography uses electron bean, ion beam lithography uses ion beam.
photolithography, optical lithography  pattern definition method which uses UV radiation to expose the resist; the most common lithography technique in semiconductor manufacturing; using extremely short wavelength UV (extreme UV; wavelenghts below 200 nm), projection printing (steppers), phase shift masks, and adequate resist technology photolithography is capable of resolution below 100 nm.
proximity effect  deleterious effect in e-beam lithography; scattering of electrons in irradiated resist; p.e. is responsible for the size of the exposed resist area being larger than the diameter of the incident electron beam; limits resolution of e-beam lithography.
raster scan  scanning mode in which beam is moving back and forth over the entire substrate; beam is turned on over designated area and then turned off until it will arrive at the next designated area.
variable shape beam  scanning mode in e-beam lithography in which shape of the beam is changing depending on the geometry of exposed area.
vector scan  scanning mode in which beam is scanning selected areas only; after scanning of selected area is completed beam is turned off and moved to another area to be scanned.
X-ray lithography  lithography method using X-ray to expose the resist; due to shorter wavelength of X-ray radiation (0.4 - 4 nm)XRL allows higher resolution than photolithography which uses longer wavelength UV irradiation; XRL requires special mask and resists sensitive to X-rays.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.