Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
drain engineering  modifications of the drain and channel region adjacent to the drain in integrated MOS and CMOS devices; goal is to improve characteristics of MOS transistors with ultra-short channel.
raised source-drain  feature of the advanced CMOS/MOSFET design; source and drain regions are raised (additional layer of Si is deposited epitaxially)with respect to the plane of the gate oxide-Si substrate interface to improve device performance.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.