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Term (Index) Definition
dose  typically understood as implantation dose; number of ions crossing one cm2 of the surface of the implanted solid; controlled by ion beam current and implantation time.
ion implantation  ions accelerated toward solid surface penetrate solid up to certain depth (see "projected range") determined by ion energy; used to introduce dopants, to form buried layers and to modify solid surfaces; concentration of implanted dopant atoms depends on ion dose; i.i. is the most common technique of dopant introduction in advanced semiconductor manufacturing.

Reference: See ion implantation animation
Term (Index) Definition
implantation dose  number of implanted ions per unite area (atoms/cm2); proportional to ion beam current and implantation time; typical doses are in the range from 1011 to 1016 atoms/cm2.
ion implantation  ions accelerated toward solid surface penetrate solid up to certain depth (see "projected range") determined by ion energy; used to introduce dopants, to form buried layers and to modify solid surfaces; concentration of implanted dopant atoms depends on ion dose; i.i. is the most common technique of dopant introduction in advanced semiconductor manufacturing.

Reference: See ion implantation animation
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