Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
direct tunneling  tunneling in MOS structures with ultra-thin oxide (< 4 nm) during which electrons from the conduction band in semiconductor are transferred across the oxide directly (i.e. without changing energy) into the conduction band of metal; probability of direct tunneling is a very strong function of the width of the barrier electron tunnels through (oxide thickness in MOS devices)
Fowler - Nordheim tunneling, F-N  current flowing across MOS structure at the high electric field in the oxide; electrons tunnel from semiconductor conduction band into oxide conduction band through part of the potential barrier at the semiconductor-oxide interface; most likely to dominate current in MOS structures with oxide 5-10 nm thick.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.