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Semiconductor Glossary book, click here to see new prices!
With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.
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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.
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Term (Index)
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Definition
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Gunn diode, TED
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III-V semiconductor (e.g. GaAs)microwave device based on Gunn effect (J.B. Gunn, 1963); also known as Transferred-Electron Diode (TED).
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TED(iode)
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Transferred-Electron Diode; microwave device also known as Gunn diode.
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Term (Index)
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Definition
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IMPATT diode
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Impact Ionization Avalanche Transit-Time; GaAs based high-performance microwave transit time diode.
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Transit-Time Diodes
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a group of microwave diodes broadly used in microwave applications.
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Term (Index)
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Definition
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LED, Light Emitting Diode
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semiconductor device emitting light; two-terminal rectifying device made using direct bandgap semiconductor; energy generated during recombination processes in the space charge region of the junction (typically p-n) is released in the form of light; wavelength of emitted radiation depends on the width of the bandgap.
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Term (Index)
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Definition
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Schottky diode
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semiconductor diode in which metal-semiconductor contact is used to form a potential barrier.
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diode
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in general, a two-terminal element displaying asymmetric (rectifying) current-voltage characteristics; large current flows under the forward bias, very small current flows under the reverse bias; realized either as a vacuum diode or semiconductor diode; semiconductor diode requires built-in potential barrier heights of which depends on the applied voltage (bias); potential barrier at the p-n junction makes a p-n junction diode while potential barrier at the metal-semiconductor junction makes a Schottky diode.
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Schottky barrier
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potential barrier at the rectifying metal-semiconductor contact.
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Term (Index)
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Definition
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semiconductor diode
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two-terminal semiconductor device which displays strongly rectifying current-voltage characteristics (large current flows under forward voltage bias while almost no current flows under the reverse voltage bias); to obtain this type of behavior a potential barrier must be created within the device structure; typically implemented by p-n junction, or metal-semiconductor contact.
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Term (Index)
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Definition
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Surface Emitting Light Emitting Diode, SELED
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radiation emerges in the direction perpendicular to the junction plane, and hence, to the surface; allows more efficient coupling to the optical fiber than edge emitting LED (EELED).
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Edge Emitting Light Emitting Diode, EELED
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LED in which radiation comes out from the edge of p-n junction in the direction parallel to the junction plane.
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Term (Index)
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Definition
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TRAPATT diode
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Trapped Plasma Avalanche-Triggered Transit; diode operating in a microwave range.
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Term (Index)
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Definition
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Zener diode
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semiconductor diode exploiting Zener tunneling resulting from impact ionization taking place in the p-n junction at the very high electric field.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.
This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.
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