Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
diffusion coefficient, D  determines rate with which element moves in a given solid by diffusion; depends strongly on temperature; expressed in cm2/sec; varies between elements by orders of magnitude, e.g. in the case of diffusion in silicon diffusion coefficient for gold, Au, is in the range of 10-3 cm2/sec (fast diffusant) while for Sb is in the range of 10-17 cm2/sec.
diffusion  in general, motion of species in solids in the direction of concentration gradient; (i)diffusion of free charge carriers in semiconductor; (ii) diffusion of dopant atoms in semiconductor at elevated temperature; (iii) diffusion - common name of the high temperature process during which dopant atoms are introduced into semiconductor by diffusion.
diffusion source  source of dopant atoms used in semiconductor doping processes; gas, liquid, and solid sources are available.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.