Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
diffusion coefficient, D  determines rate with which element moves in a given solid by diffusion; depends strongly on temperature; expressed in cm2/sec; varies between elements by orders of magnitude, e.g. in the case of diffusion in silicon diffusion coefficient for gold, Au, is in the range of 10-3 cm2/sec (fast diffusant) while for Sb is in the range of 10-17 cm2/sec.
diffusion  in general, motion of species in solids in the direction of concentration gradient; (i)diffusion of free charge carriers in semiconductor; (ii) diffusion of dopant atoms in semiconductor at elevated temperature; (iii) diffusion - common name of the high temperature process during which dopant atoms are introduced into semiconductor by diffusion.
diffusion source  source of dopant atoms used in semiconductor doping processes; gas, liquid, and solid sources are available.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.