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Semiconductor Glossary book, click here to see new prices!
With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.
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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.
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limited-source diffusion
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also known as drive-in; concentration of diffusant (dopant) on the surface decreases during the diffusion process, i.e. while some dopant atoms diffuse into the substrate no new dopant atoms are supplied to the surface of the wafer.
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unlimited source diffusion
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see predeposition.
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Term (Index)
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Definition
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diffusion coefficient, D
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determines rate with which element moves in a given solid by diffusion; depends strongly on temperature; expressed in cm2/sec; varies between elements by orders of magnitude, e.g. in the case of diffusion in silicon diffusion coefficient for gold, Au, is in the range of 10-3 cm2/sec (fast diffusant) while for Sb is in the range of 10-17 cm2/sec.
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diffusion
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in general, motion of species in solids in the direction of concentration gradient;
(i)diffusion of free charge carriers in semiconductor;
(ii) diffusion of dopant atoms in semiconductor at elevated temperature;
(iii) diffusion - common name of the high temperature process during which dopant atoms are introduced into semiconductor by diffusion.
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diffusion source
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source of dopant atoms used in semiconductor doping processes; gas, liquid, and solid sources are available.
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Term (Index)
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Definition
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diffusion current
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motion of charge carriers in semiconductor by diffusion, i.e. from the region of high carrier concentration to the region of low carrier concentration.
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drift current
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current in semiconductor caused by electric field.
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Term (Index)
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Definition
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diffusion length
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term applies to the electron transport by diffusion; the distance over which concentration of injected free charge carriers injected into semiconductor falls to 1/e of its original value.
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diffusion length
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term applies to the electron transport by diffusion; the distance over which concentration of injected free charge carriers injected into semiconductor falls to 1/e of its original value.
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minority carriers
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one of two carrier types (electrons of holes)whose equilibrium concentration is lower than that of the other type; holes in n-type semiconductors, electrons in p-type semiconductors.
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Term (Index)
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Definition
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diffusion pump
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high vacuum pump (from 10-3 torr to 10-7 torr) featuring relatively high pumping speed; in the past the most common high vacuum pump in semiconductor processing; with time eliminated from mainstream applications because of the oil vapor backstreaming into the vacuum system.
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rough, roughing, pump
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vacuum pump designed to reduced pressure from atmospheric to militorr range.
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Term (Index)
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Definition
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diffusion source
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source of dopant atoms used in semiconductor doping processes; gas, liquid, and solid sources are available.
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diborane, B2H6
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gaseous compound commonly used in silicon manufacturing as a source of boron (B, p-type dopant in Si).
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phosphine, PH3
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gaseous compound (toxic) commonly used in silicon manufacturing as a source of phosphorus (P, n-type dopant in Si).
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Term (Index)
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Definition
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interstitial diffusion
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diffusion mechanism in which diffusant moves in between host atoms in the lattice; low activation energy process; interstitial diffusants (e.g. gold in silicon) feature high diffusion coefficient.
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diffusion coefficient, D
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determines rate with which element moves in a given solid by diffusion; depends strongly on temperature; expressed in cm2/sec; varies between elements by orders of magnitude, e.g. in the case of diffusion in silicon diffusion coefficient for gold, Au, is in the range of 10-3 cm2/sec (fast diffusant) while for Sb is in the range of 10-17 cm2/sec.
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substitutional diffusion
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diffusion mechanism in which diffusant substitutes for the host atoms by displacing them from their lattice sites; high activation energy process; substitutional diffusants (e.g. all p- and n-type dopants in silicon) feature low diffusion coefficient.
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Term (Index)
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Definition
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lateral diffusion
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diffusion of dopant atoms in the direction parallel to the surface of semiconductor; in general, undesired in semiconductor device manufacturing as it causes lateral distortion of the device geometry.
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diffusion
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in general, motion of species in solids in the direction of concentration gradient;
(i)diffusion of free charge carriers in semiconductor;
(ii) diffusion of dopant atoms in semiconductor at elevated temperature;
(iii) diffusion - common name of the high temperature process during which dopant atoms are introduced into semiconductor by diffusion.
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vertical diffusion
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diffusion in solids in which diffusing species are moving in a direction normal to the wafer surface.
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Term (Index)
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Definition
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limited-source diffusion
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also known as drive-in; concentration of diffusant (dopant) on the surface decreases during the diffusion process, i.e. while some dopant atoms diffuse into the substrate no new dopant atoms are supplied to the surface of the wafer.
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drive in
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high temperature (>800 oC) operation performed on semiconductor wafer in an inert ambient; causes motion of dopant atoms in semiconductor in the direction of concentration gradient (diffusion); used to drive dopant atoms deeper into semiconductor.
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unlimited source diffusion
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see predeposition.
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Term (Index)
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Definition
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substitutional diffusion
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diffusion mechanism in which diffusant substitutes for the host atoms by displacing them from their lattice sites; high activation energy process; substitutional diffusants (e.g. all p- and n-type dopants in silicon) feature low diffusion coefficient.
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diffusant
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specie moving in the solid by diffusion
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diffusion
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in general, motion of species in solids in the direction of concentration gradient;
(i)diffusion of free charge carriers in semiconductor;
(ii) diffusion of dopant atoms in semiconductor at elevated temperature;
(iii) diffusion - common name of the high temperature process during which dopant atoms are introduced into semiconductor by diffusion.
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interstitial diffusion
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diffusion mechanism in which diffusant moves in between host atoms in the lattice; low activation energy process; interstitial diffusants (e.g. gold in silicon) feature high diffusion coefficient.
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Term (Index)
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Definition
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transient enhanced diffusion, TED
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transient effect observed during post-implantation annealing; due to the crystal damage resulting from implantation the diffusion coefficient of implanted atoms increases temporarily (i.e. until damage is annealed out)up to 10 times.
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Term (Index)
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Definition
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unlimited source diffusion
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see predeposition.
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predeposition
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semiconductor doping by diffusion; process of thermal oxidation of silicon in the ambient containing dopant atoms; heavily doped oxide formed is acting as a source of dopant during the diffusion.
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limited-source diffusion
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also known as drive-in; concentration of diffusant (dopant) on the surface decreases during the diffusion process, i.e. while some dopant atoms diffuse into the substrate no new dopant atoms are supplied to the surface of the wafer.
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Term (Index)
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Definition
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vertical diffusion
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diffusion in solids in which diffusing species are moving in a direction normal to the wafer surface.
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diffusion
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in general, motion of species in solids in the direction of concentration gradient;
(i)diffusion of free charge carriers in semiconductor;
(ii) diffusion of dopant atoms in semiconductor at elevated temperature;
(iii) diffusion - common name of the high temperature process during which dopant atoms are introduced into semiconductor by diffusion.
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lateral diffusion
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diffusion of dopant atoms in the direction parallel to the surface of semiconductor; in general, undesired in semiconductor device manufacturing as it causes lateral distortion of the device geometry.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.
This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.
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