Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
diborane, B2H6  gaseous compound commonly used in silicon manufacturing as a source of boron (B, p-type dopant in Si).
diffusion source  source of dopant atoms used in semiconductor doping processes; gas, liquid, and solid sources are available.
dopant  element introduced into semiconductor to establish either p- type (acceptors) or n- type (donors) conductivity; common dopants in silicon: p-type, boron, B; n-type phosphorous, P, arsenic, As ,antimony, Sb.
acceptor  element introduced to semiconductor to generate free hole (by "accepting" electron from semiconductor atom and "releasing" hole at the same time); acceptor atom must have one valence electron less than host semiconductor; boron (B) is the most common acceptor in silicon technology; alternatives include indium and gallium (gallium features high diffusivity in SiO2, and hence, oxide cannot be used as mask during Ga diffusion)
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.