Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
diborane, B2H6  gaseous compound commonly used in silicon manufacturing as a source of boron (B, p-type dopant in Si).
diffusion source  source of dopant atoms used in semiconductor doping processes; gas, liquid, and solid sources are available.
dopant  element introduced into semiconductor to establish either p- type (acceptors) or n- type (donors) conductivity; common dopants in silicon: p-type, boron, B; n-type phosphorous, P, arsenic, As ,antimony, Sb.
acceptor  element introduced to semiconductor to generate free hole (by "accepting" electron from semiconductor atom and "releasing" hole at the same time); acceptor atom must have one valence electron less than host semiconductor; boron (B) is the most common acceptor in silicon technology; alternatives include indium and gallium (gallium features high diffusivity in SiO2, and hence, oxide cannot be used as mask during Ga diffusion)
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.