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Term (Index) Definition
development  process following resist exposure during which resist is locally dissolved in the developer.
lithography  process used to transfer pattern from the mask/reticle to the layer of resist deposited on the surface of the wafer; kind of lithography depends on the wavelength of radiation used to expose resist: photolithography (or optical lithography) uses UV radiation, X-ray lithography uses X-ray, e-beam lithography uses electron bean, ion beam lithography uses ion beam.
photolithography, optical lithography  pattern definition method which uses UV radiation to expose the resist; the most common lithography technique in semiconductor manufacturing; using extremely short wavelength UV (extreme UV; wavelenghts below 200 nm), projection printing (steppers), phase shift masks, and adequate resist technology photolithography is capable of resolution below 100 nm.
resist  material sensitive to irradiation i.e. changes its chemical properties when irradiated; in the form of thin film used as a pattern transfer layer in lithographic processes in semiconductor manufacturing.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.