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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
depth profiling  materials characterization method allowing determination of distribution of elements in the solid in the direction normal to its surface; common in conjunction with SIMS, Auger electron spectroscopy and other methods of surface analysis; profiling is accomplished by simultaneous gradual removal of material using ion milling and analysis of its chemical composition; d.p. is broadly used in semiconductor R&D.
Auger Electron Spectroscopy, AES  surface characterization and depth profiling method based on the determination of the energy of Auger electrons ejected from the solid surface bombarded with high energy ions; only elements with atomic number > 2 can be detected.
SIMS  Secondary Ion Mass Spectroscopy; material characterization method; atoms sputtered off the surface are identified by determination of their mass (mass spectroscopy); conventional dynamic SIMS features high sputtering rate while static SIMS uses extremely low sputtering rate allowing better sensitivity to the characteristics of the very surface; allows depth profiling.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.