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Term (Index) Definition
delta doping,  formation of the doped layers which are atomic-layer thick; formed in the course of Molecular Beam Epitaxy (MBE)of multilayer structures such as superlattices.
Molecular Beam Epitaxy, MBE  physical deposition process (basically evaporation) carried out in ultra-high vacuum (below 10-8 torr) and at substrate temperature typically not exceeding 800 oC; due to unobstructed (molecular) flow of species to be deposited and chemical cleanliness of the substrate surface highly controlled growth of ultra-thin epitaxial layers is possible; the highest precision deposition method used in semiconductor processing.
superlattice  semiconductor structure comprising of several ultra-thin layers (atomic layers) engineered to obtain specific electronic and photonic properties; slight modifications of chemical composition of each layer result in slight variations of energy bandgap from layer to layer: bandgap engineering; fabrication of superlattices requires high-precision heteroepitaxial deposition methods such as MBE and MOCVD; typically involves III-V semiconductors.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

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